V. P. Electronics
V. P. Electronics
Sultanpuri, New Delhi, Delhi
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Discrete Devices




11N90 MOSFET Diodes

11N90 MOSFET Diodes
  • 11N90 MOSFET Diodes
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Approx. Price: Rs 110 / UnitGet Latest Price

Product Details:

Minimum Order Quantity50 Unit
MaterialPlastic and Metal
Number Of Pins3
Frequency50 Hz
Weight7 g
Rise Time130 ns
Drain Source Voltage900 V
Gate Source Voltage+/-30 V
Operating Junction and Storage Temperature Range-55~150 deg C

Features:
  • Low gate charge
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS compliant
  • JEDEC Qualification
  • Improved ESD performance
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Additional Information:

  • Item Code: TMAN11N90AZ
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FGL60N100BNTD Trench IGBT

FGL60N100BNTD Trench IGBT
  • FGL60N100BNTD Trench IGBT
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Approx. Price: Rs 185 / UnitGet Latest Price

Product Details:

Minimum Order Quantity25 Unit
Model NumberFGL60N100BNTD
Voltage1000 V
Current Rating40 A
UsageSwitching
Power SourceElectric
Collector to Emitter Voltage1000 V
Operating Junction Temperature-55 - +150 deg C
Storage Temperature-55 - +150 deg C

Using Fairchild's proprietary trench design and advanced NPT technoloty, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.

Features:
  • High Speed switching
  • Low saturation Voltage
  • Hight INput impedance
  • Built-in Fast recovery diode

Applications:
  • UPS
  • Welder
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  • Item Code: FGL60N100BNTD
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IKW75N60T Diode

IKW75N60T Diode
  • IKW75N60T Diode
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Approx. Price: Rs 275 / PiecesGet Latest Price

Product Details:

Minimum Order Quantity25 Pieces
BrandInfineon
Maximum Junction Temperature175 deg C
Model NoIKW75N60T
Storage Temperature-55+150 deg C
Power Dissipation428 W
No of Pin3 Pin
Packaging TypeBox
Current Rating100 A
Power2 kW

Features:
  • Very low VCE(sat) 1.5V (typ.)
  • Maximum Junction Temperature 175°C
  • Short circuit withstand time 5¿¿¿s
  • Positive temperature coefficient in VCE(sat)
  • very tight parameter distribution
  • high ruggedness, temperature stable behaviour
  • very high switching speed
  • Low EMI
  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode
  • Qualified according to JEDEC1) for target applications
  • Pb-free lead plating; RoHS compliant.

Applications:
  • Frequency Converters 
  • Uninterrupted Power Supply
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Additional Information:

  • Item Code: IKW75N60T
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FGW75N60HD Discrete IGBT

FGW75N60HD Discrete IGBT
  • FGW75N60HD Discrete IGBT
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Approx. Price: Rs 225 / PieceGet Latest Price

Product Details:

Minimum Order Quantity25 Piece
BrandFuji
Model NumberFGW75N60HD
Voltage240 V
MaterialPlastic
Usage/ApplicationOnline UPS,Welding Machine
Operating Junction Temperature-40-+175 deg C
Storage Temperature-55-+175 deg C
Frequency50 Hz

Featrues:
  • Low Power loss
  • Low Switching surge and noise
  • High reliability, high ruggedness (RBSOA, SCSOA etc)

Applicatons:
  • Uniterruptible power supply
  • Power coditionner
  • Power Factor correction circuit
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Additional Information:

  • Item Code: FGW75N60HD
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9N90 MOSFET

9N90 MOSFET
  • 9N90 MOSFET
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Product Details:

MaterialMetal and Plastic
Packaging TypeBox
Voltage6,6 V - 14,8 V
Number Of Pins3
PhaseSingle Phase, Three Phase
Dimensions35 x 12 x 10,5 mm
Maximum Current140A

MOSFET offers contactless switching of any circuit. Active brake function uses residual motor energy for its imidiate stop. The higher the torque of the motor, the better braking effect.

Advantages of using our MOSFET with active brake:

  • The piston is stopped in its default position when on semi, which leaves the spring loose.
  • Lower wear of not only piston and sping, but many other parts as well.
  • Contactless switching. 
  • No more damage to the trigger contacts by high current - only signal current going through.
  • Increases rate of fire as well as battery life.
  • Solves the problem with double shot on semi.
  • Works with all commonly used batteries (Ni-Mh/Ni-Cd/Li-Pol/Li-Ion/Li-Fe) with voltage 6,6V-14,8V.
  • Designed primarily for all AEGs - airsoft electric guns.


MOSFET with active brake Classic description:

  • Maximum current up to 140A - recommended use in correctly working replica is with spring up to M160 and rate of fire up to 28bbs/s.
  • Power wires can be used up to 1,5mm2 (AWG16), signal up to 0,25mm2 (AWG24).
  • Connected by two wires to each element - battery, motor, trigger contacts (see scheme).
  • Built-in voltage stabilisation keeps MOSFET fully used at all times.


Alternatives:

  • For higher load choose MOSFET with active brake Ultra.
  • If you are not familiar with soldering, choose alternative with complete wiring.


Package contents:
 

  • MOSFET with active brake Classic
  • heat-shrink tubing for MOSFET
  • user manual with installation instructions
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Upender Gupta (Proprietor)
No. 53, Friends Enclave, East Block
Sultanpuri, New Delhi- 110086, Delhi, India



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