V. P. Electronics
V. P. Electronics
Sultanpuri, New Delhi, Delhi
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Power Mosfet

Leading Manufacturer of 2sa1943 toshiba transistor, 4n35 transistor, 2sk1317 power mosfet, tlp250 toshiba photocoupler, ste53nc50 power mosfet and spw20n60c3 power mosfet from New Delhi.

2SA1943 Toshiba Transistor

2SA1943 Toshiba Transistor
  • 2SA1943 Toshiba Transistor
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Product Details:

Minimum Order Quantity50 Piece
Collector Base Voltage230 V
Collector Emitter Voltage230 V
Emitter Base Voltage-5 V
Collector Current-15 V
Collector Dissipation150 W
Current Gain55 - 160
Transition Frequency30 Hz

Power Amplifier Applications:
  • High collector voltage VCEO = −230 V (min)
  • Complementary to 2SC5200
  • Recommended for 100-W high-fidelity audio frequency amplifier output stage.
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  • Item Code: VP-IGBTM-0399
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4N35 Transistor

4N35 Transistor
  • 4N35 Transistor
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Product Details:

Minimum Order Quantity50 Piece
BrandVishay
Input Reverse Voltage6 V
Input Forward Current60 mA
Input Surge Current2.5 A
Input Power Dissipation60 mW
Collector Emitter Breakdown Voltage70 V
Emitter Base Breakdown Voltage7 V
Output Collector Current50 mA
Model No4N35
Storage Temperature- 55 to + 150 deg C
Operating Temperature- 55 to + 100 deg C

This datasheet presents five families of Vishay industry standard single channel phototransistor couplers. These families include the 4N35, 4N36, 4N37, 4N38 couplers. Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5000 VRMS isolation test voltage. This isolation performance is accomplished through Vishay double molding isolation manufacturing process. Comliance to DIN EN 60747-5-5 partial discharge isolation specification is available for these families by ordering option 1. These isolation processes and the Vishay ISO9001 quality program results in the highest isolation performance available for a commecial plastic phototransistor optocoupler. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers.

Features:
  • Isolation test voltage 5000 VRMS
  • Interfaces with common logic families
  • Input-output coupling capacitance < 0.5 pF
  • Industry standard dual-in-line 6 pin package
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Applications:
  • AC mains detection
  • Reed relay driving
  • Switch mode power supply feedback
  • Telephone ring detection
  • Logic ground isolation
  • Logic coupling with high frequency noise rejection
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2SK1317 Power MOSFET

2SK1317 Power MOSFET
  • 2SK1317 Power MOSFET
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Product Details:

Minimum Order Quantity50 Piece
BrandRenesas
Model Number2SK1317
Storage Temperature-55 to +150 deg C
Drain peak current ID1 7 A
Drain to Source Voltage1500 V
Gate to Source Voltage20 V
Drain Current2.5 A
Drain Peak Current7 A
Channel Dissipation100 W
Channel Temperature150 Degree C

Features:

  • High Breakdown Voltage Vdss = 1500 V
  • High Speed Switching
  • Low Drive Current
  • No Secondary Breakdown
  • Suitable For Switching Regulator, Dc-Dc Converter And Motor Driver 
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  • Item Code: VP-IGBTM-0405
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TLP250 Toshiba Photocoupler

TLP250 Toshiba Photocoupler
  • TLP250 Toshiba Photocoupler
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Product Details:

Minimum Order Quantity50 Piece
BrandToshiba
Model NumberTLP 250
Forward current20 mA
Model NoTLP250
Reverse Voltage5 V
Operating Frequency25 kHz
Operating Temperature Range-20~85 deg C
Storage Temperature Range-55~125 deg C
Lead Soldering Temperature260 deg C (10 S)
Isolation Voltage2500Vrms (min)
Supply Current11mA (max)
Supply Voltage10-35V
Output Current+-1.5A (max)
Switching Time1.5us (max)

The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a integrated photodetector. This unit is 8−lead DIP package. TLP250 is suitable for gate driving circuit of IGBT or power MOS FET. 
  • Input threshold current: IF=5mA(max.)
  • Supply current (ICC): 11mA(max.)
  • Supply voltage (VCC): 10−35V
  • Output current (IO): ±1.5A (max.)
  • Switching time (tpLH/tpHL): 1.5µs(max.)
  • Isolation voltage: 2500Vrms(min.)
  • UL recognized: UL1577, file No.E67349
  • Option (D4) type
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  • Item Code: VP-IC-0011
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STE53NC50 Power MOSFET

STE53NC50 Power MOSFET
  • STE53NC50 Power MOSFET
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Product Details:

Minimum Order Quantity50 Piece
Model NumberSTE53NC50
Storage Temperature- 65 to 150 deg C
Insulation Winthstand Voltage2500 V (AC-RMS)
Drain Current212 A (pulsed)
Gate Source Voltage+30 V
Drain Source Voltage500 V
Max Operating Junction Temperature150 deg C
Derating Factor3.68 W/C

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

Applications:
  • High Current, High Speed Switching
  • Swith Mode Power Supplies (Smps)
  • Dc-Ac Converters For Welding Equipment And Uninterruptible Power Supplies And Motor Driver.
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  • Item Code: VP-IGBTM-0511
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SPW20N60C3 Power MOSFET

SPW20N60C3 Power MOSFET
  • SPW20N60C3 Power MOSFET
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Product Details:

Minimum Order Quantity50 Piece
BrandInfineon
Model NumberSPW20N60C3
Operating and Storage Temperature-55+150 deg C
Inverse Diode Forward Voltage1.2 V
Peak Reverse Recovery Current48 A
Gate Plateau Voltage8 V
Thermal Resistance0.6 kW
Power Dissipation208 W
Soldering Temperature1.6 mm (0.063 in.) from case for 10s

Features:
  • New revolutionary high voltage technology
  • Ultra low gate charge
  • Periodic avalanche rated
  • Extreme dv/dt rated
  • Ultra low effective capacitances
  • Improved noise immunity.
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  • Item Code: VP-IGBTM-0514
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RFP50N06 Power MOSFET

RFP50N06 Power MOSFET
  • RFP50N06 Power MOSFET
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Product Details:

Minimum Order Quantity50 Piece
BrandFairchild
Model NumberRFP50N06
Voltage60 V
Operating Temprature175 Degree C
Drain to Source Voltage60 V
Continuous Drain Current50 A

These N-Channel power MOSFETs are manufactured using the MegaFET process. This, which use feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, Motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits

Features:
  • rDS(ON) = 0.022W
  • Temperature Compensating PSPICE® Model
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
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  • Item Code: VP-IGBTM-0496
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TPD2007F Power MOSFET

TPD2007F Power MOSFET
  • TPD2007F Power MOSFET
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Product Details:

Minimum Order Quantity50 Piece
BrandToshiba
Model NumberTPD2007F
Storage Temperature-55 ~ 150 deg C
Operating Temperature-40 ~ 85 deg C
Junction Temperature150 deg C
Drain Source Voltage40 V
Low Resistance1.4 U max Vin = 5 V, ID = 0.5 A (per channel)
Weight0.29 g
Input VoltageVIN - 0.5 - 7 V
No of Channel8 Channel
Voltage40 V

The TPD2007F is an 8-channel low-side switch array. The IC has a vertical MOSFET output which can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). It offers overcurrent and overtemperature protection functions.

Features
  • 8-channel low-side switch array incorporating an N-channel power MOSFET (1.4Ω max)
  • Can directly drive a power load from a microprocessor.
  • Built-in protection against overtemperature and overcurrent
  • 8-channel access enables space-saving design.
  • High operating voltage 40 V
  • Low on-resistance 1.4 U max @VIN = 5 V, ID = 0.5 A (per channel)
  • Supports parallel operation.
  • Built-in active clamp circuit
  • Supplied in an SSOP-24 package (300 mil) in embossed taping.
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  • Item Code: VP-IC-0002
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Upender Gupta (Proprietor)
No. 53, Friends Enclave, East Block
Sultanpuri, New Delhi- 110086, Delhi, India



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