V. P. Electronics

• 50~900 A Ic
• 600, 1200, or 1700 Vces
• Collector-emitter voltage - Tvj = 25°C 
• Repetitive peak collector current - tP = 1 ms

Features

• IGBT4 = 4. generation medium fast trench IGBT (Infineon)
• CAL4 = Soft switching 4. generation CAL-diode
• Isolated copper baseplate using DBC technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequenzies up to 12kHz

Typical Applications*

• AC inverter drives
• UPS

•    MOS input (voltage controlled)

•    N channel, Homogeneouc Si

•    Low inductance cace

•    Very low tail current with low temperature dependence

•    High chort circuit capability, celf limiting to 6 x Icnom

•    Latch-up free

•    Fact & coft inverce CAL diodec

•    Icolated copper baceplate ucing DCB Direct Copper Bonding

Technology

Features

• Superior solution for frequency controlled inverter drives
• UL/CSA Certification with UL1557 E83336
• Operating temperature up to 125 °C (max 150 °C)
• Optimized switching characteristic like softness and reduced switching losses
• Existing packages with higher current capability
• RoHS compliant

• Motor control and drives

Benefits

• High Power Density
• Standardized housing

• Operating temperature up to 125 °C (max 150 °C)
• Optimized switching characteristic like softness and reduced switching losses
• Existing packages with higher current capability

• High speed switching
• Low saturation voltage: VCE(sat) = 2.6 V @ IC = 40A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 75ns (typ.)

• Induction Heating, UPS, AC & DC motor controls and general purpose inverters.

Features:

• NPT- Non punch-through IGBT
• Low tail current with low temperature dependence
• High short circuit capability, self limiting if term. G ic clamped to E
• Poc. temp.-coeff. of VCEcat
• 50 % less turn off losses
• 30 % less short circuit current
• Very low Ciec, Coec, Crec
• Latch-up free
• Fast & soft inverse CAL diodes
• Isolated copper baceplate using DCB Direct Copper Bonding Technology without hard mould
• Large clearance (13 mm) and creepage distances (20 mm)

Typical Applications:

• Switching (not for linear use)
• Switched mode power supplies
• AC inverter servo drives
• UPS uninterruptable power supplies
• Welding inverters.

• N channel , homogeneous Si
• Low inductance case
• Short tail current with low temperature dependence
• High short circuit capability, self limiting to 6 x I_cnom
• Fast & soft inverse CAL diodes
• Isolated copper baseplate using DCB Direct Copper Bonding Technology
• Large clearance (13 mm) and creepage distance (20 mm)

• N channel, homogeneous si
• Low inductance case
• Short tail current with low temperature dependence
• High short circuit capability, self limiting to 6 x 1 cnom
• Fast and soft inverse CAL diodes
• Isolated copper baseplate using DCB Direct Copper Bonding technology
• Large Clearance (10 mm) and creepage distance (20 mm)

•   IGBT4 = 4. generation fast trench IGBT (Infineon)

•   CAL4 = Soft switching 4. generation CAL-diode

•   Isolated copper baseplate using DBC technology (Direct Bonded Copper)

•   Increased power cycling capability

•   With integrated gate resistor

• MOS input (Voltage Controlled)
• N channel, Homogeneous si
• Low inducatance case
• Very low tail current with low temperature dependence
• High short circuit capability, self limiting to 6
• Latch up free
• Fast and soft inverse cal diodes
• Isolated copper base plate using DCB Direct copper bonding Technology
• Large clearance (10 mm) amd Creepage Distance (20 mm)

• IGBT4 = 4th generation fast trench IGBT (Infineon)
• CAL4 = Soft switching 4th generation CAL-diode
• Insulated copper baseplate using DBC technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequencies up to 20kHz

•   IGBT4 = 4. generation medium fast trench IGBT (Infineon)

•   CAL4 = Soft switching 4. generation CAL-diode

•   Isolated copper baseplate using DBC technology (Direct Bonded Copper)

•   Increased power cycling capability

•   With integrated gate resistor

Features:

• MOS input (voltage controlled)
• N channel, homogeneous Si
• Low inductance case
• Very low tail current with low temperature dependence
• High short circuit capability, self limiting to 6 x Icnom
• Latch-up free
• Fast & soft inverse CAL diodes
• Isolated copper baseplate using DCB Direct Copper Bonding
• Technology
• Large clearance (9 mm) and creepage distances (13 mm)

Typical Applications:

• Switched mode power supplies
• Three phase inverters for AC motor speed control
• Pulse frequencies also above 15 kHz.

Features

• N channel, homogeneous Si-structure (NPT-Non punch-through IGBT)
• Low tail current with low temperature dependence
• High short circuit capability, self limiting if term. G ic clamped to E
• Poc. temp.-coeff. of VCEcat
• Very low Ciec, Coec, Crec
• Latch-up free
• Fast & soft inverse CAL diodes
• Isolated copper baceplate using DBC Direct Copper Bonding Technology without hard mould
• Large clearance (10 mm) and creepage distances (20 mm)

Typical Applications*

• Switching (not for linear use)
• Switched mode power supplies
• UPS
• Three phase inverters for servo / AC motor speed control
• Pulse frequencies also > 10kHz

• High speed trench and field-stop IGBT
• CAL4 ultra-fast = soft switching 4. generation CAL-diode
• Insulated copper baseplate using DBC technology (Direct Bonded Copper)
• Increased power cycling capability
• For higher switching frequencies above 15kHz
• UL recognized, file no. E63532

Features:

• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Over current Limiting Function (~3 Times Rated Current)

Applications:

• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power

•         Homogeneous Si

•         Trench = Trenchgate technology

•         VCE(cat) with positive temperature coefficient

• IGBT4 = 4. generation fast trench IGBT (Infineon) 
• CAL4 = Soft switching 4. generation CAL-diode 
• Insulated copper baseplate using DBC technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequencies up to 20kHz
• UL recognized, file no. E63532

• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz

• Low Drive Power
• Low VCE(sat)
• Discrete Super-Fast Recovery
• Free-Wheel Diode
• High Frequency Operation
• Isolated Baseplate for Easy Heat Sinking

• AC Motor Control
• Motion/Servo Control
• UPS
• Welding Power Supplies

• Example: Select the complete part
• module number you desire from
• the table below -i.e. CM100TF-12H
• is a 600V (VCES), 100 Ampere
• Six-IGBT Module.

• High power converters
• Motor drives
• Traction drives
• Wind turbines

• Extended operating temperature Tvjop
• High current density
• Low switching losses
• Low VCEsat
• Tvjop=175 deg C

• Package with CTI>400
• High creepage and clearance distances
• High power and thermal cycling capability
• High power density

• High Frequency Switching Application
• Medical Applications
• Motor Drives
• Resonant Inverter Appliccations
• Servo Drives
• UPSS ystems

• High Short Circuit Capability, Self Limiting Short
• Circuit Current
• Low Switching Losses
• Unbeatable Robustness
• VCEsat with positive Temperature Coefficient

• Package with CTI>400
• High creepage and clearance distances
• High power and thermal cycling capability
• Isolated Base Plate
• Copper Base Plate
• Standard Housing

Features:

• NPT-Technology
• Square SC SOA at 10 x IC
• High Short Circuit Withstand-Capability
• Small Temperature Dependence of the Turn-Off
• Switching Loss
• Low Losses And Soft Switching

Applications:

• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply

• Lower E_off compared to previous generation
• Designed for
• Motor controls
• Inverter
• SMPS
• NPT-Technology offers
• very tight parameter distribution
• high ruggedness, temperature stable behaviour
• parallel switching capability
• Qualified according to JEDEC¹ for target applications
• Pb-free lead plating; RoHS compliant

•   IGBT4 = 4. generation fast trench IGBT (Infineon)

•   CAL4 = Soft switching 4. generation CAL-diode

•   Isolated copper baseplate using DBC technology (Direct Bonded Copper)

•   Increased power cycling capability

•   With integrated gate resistor

• Homogeneous Si
• NPT-IGBT
• VCE(sat) with positive temperature coefficient
• High short circuit capability, self limiting to 6 x IC

• Inductive heating

• IDC ≤ 500 A limited by terminals
• Take care of over-voltage caused by stray inductances

•  Half-bridge

•  Including fast free-wheeling diodes

•  Package with insulated metal base plate

Features:

• IGBT4 = 4. generation fast trench IGBT (Infineon)
• CAL4 = Soft switching 4. generation CAL-diode
• Isolated copper baseplate using DBC technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequencies up to 20kHz

Typical Applications:

• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz

• Low inductance case
• Short tail current with low temperature dependence
• High short circuit capability, self limiting to 6 x I_cnom
• Fast & soft inverse CAL diodes
• Isolated copper baseplate using DBC Direct Copper Bonding Technology
• Large clearance (13 mm) and creepage distances (20 mm)

• Switched mode power supplies at f_sw > 20kHz
• Resonant inverters up to 100 kHz
• Inductive heating
• Electronic welders at f_sw > 20 kHz