Mosfet Transistor

Product Details:

OSG65R099HF TO-247 Enhancement Mode N-Channel Power MOSFET use advanced Green MOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for telecom and super charger applications.

Features:

• Low RDS(on) & FOM
• Excellent low switching loss
• Excellent stability and uniformity
• Easy to drive

Applications:

• PC power
• Server power supply
• Telecom
• Solar invertor
• Super charger for automobiles

Additional Information:

• Item Code: OSG65R099HF

Product Details:

Features:

• Ultra-fast and robust body diode
• Low Ros(on) & FOM
• Excellent low switching loss
• Excellent stability and uniformity
• Easyto drive

Product Details:

Using Fairchild's proprietary trench design and advanced NPT technoloty, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.

Features:

• High Speed switching
• Low saturation Voltage
• Hight INput impedance
• Built-in Fast recovery diode

Applications:

• UPS
• Welder

Additional Information:

• Item Code: FGL60N100BNTD

Product Details:

Featrues:

• Low Power loss
• Low Switching surge and noise
• High reliability, high ruggedness (RBSOA, SCSOA etc)

Applicatons:

• Uniterruptible power supply
• Power coditionner
• Power Factor correction circuit

Additional Information:

• Item Code: FGW75N60HD

Product Details:

MOSFET offers contactless switching of any circuit. Active brake function uses residual motor energy for its imidiate stop. The higher the torque of the motor, the better braking effect.

Advantages of using our MOSFET with active brake:

• The piston is stopped in its default position when on semi, which leaves the spring loose.
• Lower wear of not only piston and sping, but many other parts as well.
• Contactless switching. 
• No more damage to the trigger contacts by high current - only signal current going through.
• Increases rate of fire as well as battery life.
• Solves the problem with double shot on semi.
• Works with all commonly used batteries (Ni-Mh/Ni-Cd/Li-Pol/Li-Ion/Li-Fe) with voltage 6,6V-14,8V.
• Designed primarily for all AEGs - airsoft electric guns.

MOSFET with active brake Classic description:

• Maximum current up to 140A - recommended use in correctly working replica is with spring up to M160 and rate of fire up to 28bbs/s.
• Power wires can be used up to 1,5mm2 (AWG16), signal up to 0,25mm2 (AWG24).
• Connected by two wires to each element - battery, motor, trigger contacts (see scheme).
• Built-in voltage stabilisation keeps MOSFET fully used at all times.

Alternatives:

• For higher load choose MOSFET with active brake Ultra.
• If you are not familiar with soldering, choose alternative with complete wiring.

Package contents: 

• MOSFET with active brake Classic
• heat-shrink tubing for MOSFET
• user manual with installation instructions

Product Details:

Features:

• Very low VCE(sat) 1.5V (typ.)
• Maximum Junction Temperature 175°C
• Short circuit withstand time 5¿¿¿s
• Positive temperature coefficient in VCE(sat)
• very tight parameter distribution
• high ruggedness, temperature stable behaviour
• very high switching speed
• Low EMI
• Very soft, fast recovery anti-parallel Emitter Controlled HE diode
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant.

Applications:

• Frequency Converters 
• Uninterrupted Power Supply

Additional Information:

• Item Code: IKW75N60T

Product Details:

Features:

• Ultra-fast and robust body diode
• Low Ros(on) & FOM
• Excellent low switching loss
• Excellent stability and uniformity
• Easyto drive

Applications:

• PC Power
• Server Power Supply
• Telecom
• Solar Inverter
• Super Charger for Automobiles (E- Rickshaw battery charger)
• TO-247 Package

Product Details:

Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved noise immunity.

Additional Information:

• Item Code: VP-IGBTM-0514

Product Details:

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

Applications:

• High Current, High Speed Switching
• Swith Mode Power Supplies (Smps)
• Dc-Ac Converters For Welding Equipment And Uninterruptible Power Supplies And Motor Driver.

Additional Information:

• Item Code: VP-IGBTM-0511

Product Details:

These N-Channel power MOSFETs are manufactured using the MegaFET process. This, which use feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, Motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits

Features:

• rDS(ON) = 0.022W
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve

Additional Information:

• Item Code: VP-IGBTM-0496

Product Details:

Power Amplifier Applications:

• High collector voltage VCEO = −230 V (min)
• Complementary to 2SC5200
• Recommended for 100-W high-fidelity audio frequency amplifier output stage.

Additional Information:

• Item Code: VP-IGBTM-0399

Product Details:

High Power Switching Applications Motor Control Applications

- Enhancement-mode

- The electrodes are isolated from case.

Additional Information:

• Item Code: VP-IGBTM-0449
• Pay Mode Terms: Other
• Port of Dispatch: courier
• Production Capacity: 1000
• Delivery Time: immidietly else 2-3 weeks