Mosfet Transistor

Offering you a complete choice of products which include acm020p120q alpha power solution, mg100j1bs11 igbt modules, osg65r099hf to-247 n-channel power (vp006139), fgl60n100bntd trench igbt (vp003265), 9n90 mosfet (metal & plastic) and fgw75n60hd discrete igbt(vp003266).

ACM020P120Q ALPHA POWER SOLUTION

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₹ 2250 / Piece Get Latest Price

Product Brochure
Voltage1200V
Service LocationALL INDIA
Part NumberACM020P120Q
BrandAlpha Power Solution
Current100A

Minimum order quantity: 1 Piece

Features
• High Blocking Voltage
• High Frequency Operation
• Low on-resistance
• Fast intrinsic diode with low reverse recovery TO-247-4

Benefits
• Higher System Efficiency
• Parallel Device Convenience without thermal runaway
• High Temperature

Application
• Hard Switching & Higher Reliability
• Easy to drive Applications
• Motor Drives
• Solar / Wind Inverters
• EV Charging Station
• AC/DC converters
• DC/DC converters
• Uninterruptable power supplies

MG100J1BS11 IGBT MODULES

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₹ 1850 / Piece Get Latest Price

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Part NumberMG100J1BS11
BrandToshiba
Package TypeBOX
Model Name/NumberMG100J1BS11, MG100J1BS11

Minimum order quantity: 50 Piece

High Power Switching Applications Motor Control Applications

- Enhancement-mode

- The electrodes are isolated from case.

OSG65R099HF TO-247 N-Channel Power (VP006139)

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₹ 250 / Piece Get Latest Price

Product Brochure
Voltage650 V
BrandGreenMOS
Usage/ApplicationE- Rickshaw Battery Charger
Number Of Pins3 pins
Current40 Ampere
Model NoOSG65R099HF
Drain Source Voltage650 V
Gate Source Voltage+/-30 V
Operation and storage temperature-55 to 150 deg C
OSG65R099HF TO-247 Enhancement Mode N-Channel Power MOSFET use advanced Green MOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for telecom and super charger applications.

Features:
  • Low RDS(on) & FOM
  • Excellent low switching loss
  • Excellent stability and uniformity
  • Easy to drive

Applications:
  • PC power
  • Server power supply
  • Telecom
  • Solar invertor
  • Super charger for automobiles

FGL60N100BNTD Trench IGBT (VP003265)

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₹ 315 / Unit Get Latest Price

Product Brochure
Current Rating40 A
Model NumberFGL60N100BNTD
Voltage1000 V
Operating Junction Temperature-55 - +150 deg C
Storage Temperature-55 - +150 deg C
Collector to Emitter Voltage1000 V
Power SourceElectric
UsageSwitching

Minimum order quantity: 25 Unit

Using Fairchild's proprietary trench design and advanced NPT technoloty, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.

Features:
  • High Speed switching
  • Low saturation Voltage
  • Hight INput impedance
  • Built-in Fast recovery diode

Applications:
  • UPS
  • Welder

9N90 MOSFET (METAL & PLASTIC)

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₹ 32 / Piece Get Latest Price

Product Brochure
Voltage6,6 V - 14,8 V
Mounting TypeDIP
Packaging TypeBox
Number Of Pins3
PhaseSingle Phase, Three Phase
MaterialMetal and Plastic
Dimensions35 x 12 x 10,5 mm
Maximum Current140A

MOSFET offers contactless switching of any circuit. Active brake function uses residual motor energy for its imidiate stop. The higher the torque of the motor, the better braking effect.

Advantages of using our MOSFET with active brake:

  • The piston is stopped in its default position when on semi, which leaves the spring loose.
  • Lower wear of not only piston and sping, but many other parts as well.
  • Contactless switching. 
  • No more damage to the trigger contacts by high current - only signal current going through.
  • Increases rate of fire as well as battery life.
  • Solves the problem with double shot on semi.
  • Works with all commonly used batteries (Ni-Mh/Ni-Cd/Li-Pol/Li-Ion/Li-Fe) with voltage 6,6V-14,8V.
  • Designed primarily for all AEGs - airsoft electric guns.


MOSFET with active brake Classic description:

  • Maximum current up to 140A - recommended use in correctly working replica is with spring up to M160 and rate of fire up to 28bbs/s.
  • Power wires can be used up to 1,5mm2 (AWG16), signal up to 0,25mm2 (AWG24).
  • Connected by two wires to each element - battery, motor, trigger contacts (see scheme).
  • Built-in voltage stabilisation keeps MOSFET fully used at all times.


Alternatives:

  • For higher load choose MOSFET with active brake Ultra.
  • If you are not familiar with soldering, choose alternative with complete wiring.


Package contents:
 

  • MOSFET with active brake Classic
  • heat-shrink tubing for MOSFET
  • user manual with installation instructions

FGW75N60HD Discrete IGBT(VP003266)

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₹ 280 / Piece Get Latest Price

Product Brochure
BrandFuji
MaterialPlastic
Usage/ApplicationOnline UPS,Welding Machine
Model NumberFGW75N60HD
Voltage240 V
Operating Junction Temperature-40-+175 deg C
Storage Temperature-55-+175 deg C
Frequency50 Hz

Minimum order quantity: 25 Piece

Featrues:
  • Low Power loss
  • Low Switching surge and noise
  • High reliability, high ruggedness (RBSOA, SCSOA etc)

Applicatons:
  • Uniterruptible power supply
  • Power coditionner
  • Power Factor correction circuit

RFP50N06 Power MOSFET

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₹ 75 / Piece Get Latest Price

Product Brochure
BrandFairchild
Model NumberRFP50N06
Voltage60 V
Operating Temprature175 Degree C
Drain to Source Voltage60 V
Continuous Drain Current50 A

Minimum order quantity: 50 Piece

These N-Channel power MOSFETs are manufactured using the MegaFET process. This, which use feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, Motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits

Features:
  • rDS(ON) = 0.022W
  • Temperature Compensating PSPICE® Model
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve

2SA1943 Toshiba Transistor

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₹ 195 / Piece Get Latest Price

Product Brochure
Collector Base Voltage230 V
Collector Emitter Voltage230 V
Emitter Base Voltage-5 V
Collector Current-15 V
Collector Dissipation150 W
Current Gain55 - 160
Transition Frequency30 Hz

Minimum order quantity: 50 Piece

Power Amplifier Applications:
  • High collector voltage VCEO = −230 V (min)
  • Complementary to 2SC5200
  • Recommended for 100-W high-fidelity audio frequency amplifier output stage.

SPW20N60C3 Power MOSFET (VP005353)

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₹ 265 / Piece Get Latest Price

Product Brochure
BrandInfineon
Model NumberSPW20N60C3
Operating and Storage Temperature-55+150 deg C
Inverse Diode Forward Voltage1.2 V
Peak Reverse Recovery Current48 A
Gate Plateau Voltage8 V
Thermal Resistance0.6 kW
Power Dissipation208 W
Soldering Temperature1.6 mm (0.063 in.) from case for 10s

Minimum order quantity: 50 Piece

Features:
  • New revolutionary high voltage technology
  • Ultra low gate charge
  • Periodic avalanche rated
  • Extreme dv/dt rated
  • Ultra low effective capacitances
  • Improved noise immunity.

STE53NC50 Power MOSFET

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₹ 650 / Piece Get Latest Price

Product Brochure
Model NumberSTE53NC50
Storage Temperature- 65 to 150 deg C
Insulation Winthstand Voltage2500 V (AC-RMS)
Drain Current212 A (pulsed)
Gate Source Voltage+30 V
Drain Source Voltage500 V
Max Operating Junction Temperature150 deg C
Derating Factor3.68 W/C

Minimum order quantity: 50 Piece

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

Applications:
  • High Current, High Speed Switching
  • Swith Mode Power Supplies (Smps)
  • Dc-Ac Converters For Welding Equipment And Uninterruptible Power Supplies And Motor Driver.

TMAN23N50A N-Channel MOSFET (VP005732)

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₹ 185 / Unit Get Latest Price

Product Brochure
BrandTrinno
Number Of Pins3
Packaging TypePlastic Packet
Drain Source Voltage500 V
Gate Source Voltage+/-30 V
Temperature-55~150 deg C
Model NoTMAN23N50A

Minimum order quantity: 50 Unit

Features:
  • Low gate charge
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS compliant
  • JEDEC Qualification

OSG60R092HF MOSFET(VP006138)

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₹ 250 / Piece Get Latest Price

Product Brochure
Drain-Source Voltage (VDS)650V
Continuous Drain Current (ID)120A
BrandGreenMOS
Usage/ApplicationE- Rickshaw Battery Charger
Voltage600 V
Number Of Pins3 Pin
Current40 Ampere
Drain Source Voltage600 V
Model NoOSG60R092HF
Gate Source Voltage+/-30 V
Operation and Storage Temperature-55 to 150 deg C

Minimum order quantity: 50 Piece

Features:
  • Ultra-fast and robust body diode
  • Low Ros(on) & FOM
  • Excellent low switching loss
  • Excellent stability and uniformity
  • Easyto drive


IKW75N60T Diode (VP003509)

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₹ 275 / Piece Get Latest Price

Product Brochure
BrandInfineon
Maximum Junction Temperature175 deg C
Model NoIKW75N60T
Storage Temperature-55+150 deg C
Power Dissipation428 W
No of Pin3 Pin
Packaging TypeBox
Current Rating100 A
Power2 kW

Minimum order quantity: 25 Piece

Features:
  • Very low VCE(sat) 1.5V (typ.)
  • Maximum Junction Temperature 175°C
  • Short circuit withstand time 5???s
  • Positive temperature coefficient in VCE(sat)
  • very tight parameter distribution
  • high ruggedness, temperature stable behaviour
  • very high switching speed
  • Low EMI
  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode
  • Qualified according to JEDEC1) for target applications
  • Pb-free lead plating; RoHS compliant.

Applications:
  • Frequency Converters 
  • Uninterrupted Power Supply

OSG65R069HZF TO-247 Diode (VP006069)

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₹ 275 / Piece Get Latest Price

Product Brochure
BrandGreenMOS
Storage Temperature-55 to 150 Degree C
Drain Source Voltage650 V
Power Dissipation390 W at Tc=25 Deg C
Gate Source Voltage+/-30V
Model NoOSG65R069HZF TO-247

Minimum order quantity: 50 Piece

Features:
  • Ultra-fast and robust body diode
  • Low Ros(on) & FOM
  • Excellent low switching loss
  • Excellent stability and uniformity
  • Easyto drive

Applications:
  • PC Power
  • Server Power Supply
  • Telecom
  • Solar Inverter
  • Super Charger for Automobiles (E- Rickshaw battery charger)
  • TO-247 Package

2CH IGBT DC-DC Driver (+2.5A-5A)

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₹ 2250 / Piece Get Latest Price

Product Brochure
Part NumberVP008538
BrandV P Electronics
Model Name/NumberDual IGBT-MOSFET-Silicon Carbide Driver
Country of OriginMade in India

Minimum order quantity: 1 Piece

Low Power dual channel driver 2X1 Watt Output Power±2.5 source & sink gate current.+15V/-7V Drive up to 2100V DC IGBT Module Short circuit clampingActive shut down4A Internal Active Miller clamp function400mA soft turn off when fault happen5KVrms isolationSwitching frequency up to 100 KHzLess than 130 ns propagation delay timePrimary/Sec. Supply under voltage lockoutVce monitoring for short circuit protection200 ns response time fast DESET protectionIsolated analog sensor with PWM output for1. Temperature sensing with NTC, PTC or thermal diode2. High voltage DC-Link or phase voltage
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Upender Gupta (Proprietor)
V. P. Electronics
No. 53, Friends Enclave, East Block
New Delhi - 110086, Delhi, India

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