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Mosfet Transistor
Offering you a complete choice of products which include osg65r099hf to-247 enhancement mode n-channel power mosfet, osg60r092hf enhancement mode n-channel power mosfet, fgl60n100bntd trench igbt, fgw75n60hd discrete igbt, 9n90 mosfet and osg65r069hzf to-247 diode.
OSG65R099HF TO-247 Enhancement Mode N-Channel Power MOSFET
Product Price: Rs 250 / PieceGet Best Price
Minimum Order Quantity: 50 Piece
Product Brochure
Product Details:
| Brand | GreenMOS |
| Usage/Application | E- Rickshaw Battery Charger |
| Voltage | 650 V |
| Number Of Pins | 3 pins |
| Current | 40 Ampere |
| Model No | OSG65R099HF |
| Drain Source Voltage | 650 V |
| Gate Source Voltage | +/-30 V |
| Operation and storage temperature | -55 to 150 deg C |
Features:
- Low RDS(on) & FOM
- Excellent low switching loss
- Excellent stability and uniformity
- Easy to drive
Applications:
- PC power
- Server power supply
- Telecom
- Solar invertor
- Super charger for automobiles
Additional Information:
- Item Code: OSG65R099HF
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OSG60R092HF Enhancement Mode N-Channel Power MOSFET
Product Price: Rs 250 / PieceGet Best Price
Minimum Order Quantity: 50 Piece
Product Brochure
Product Details:
| Brand | GreenMOS |
| Usage/Application | E- Rickshaw Battery Charger |
| Voltage | 600 V |
| Number Of Pins | 3 Pin |
| Current | 40 Ampere |
| Drain Source Voltage | 600 V |
| Model No | OSG60R092HF |
| Gate Source Voltage | +/-30 V |
| Operation and Storage Temperature | -55 to 150 deg C |
- Ultra-fast and robust body diode
- Low Ros(on) & FOM
- Excellent low switching loss
- Excellent stability and uniformity
- Easyto drive
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FGL60N100BNTD Trench IGBT
Product Price: Rs 185 / UnitGet Best Price
Minimum Order Quantity: 25 Unit
Product Brochure
Product Details:
| Model Number | FGL60N100BNTD |
| Voltage | 1000 V |
| Current Rating | 40 A |
| Usage | Switching |
| Power Source | Electric |
| Collector to Emitter Voltage | 1000 V |
| Operating Junction Temperature | -55 - +150 deg C |
| Storage Temperature | -55 - +150 deg C |
Features:
- High Speed switching
- Low saturation Voltage
- Hight INput impedance
- Built-in Fast recovery diode
Applications:
- UPS
- Welder
Additional Information:
- Item Code: FGL60N100BNTD
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FGW75N60HD Discrete IGBT
Product Price: Rs 225 / PieceGet Best Price
Minimum Order Quantity: 25 Piece
Product Brochure
Product Details:
| Model Number | FGW75N60HD |
| Brand | Fuji |
| Voltage | 240 V |
| Material | Plastic |
| Usage/Application | Online UPS,Welding Machine |
| Operating Junction Temperature | -40-+175 deg C |
| Storage Temperature | -55-+175 deg C |
| Frequency | 50 Hz |
- Low Power loss
- Low Switching surge and noise
- High reliability, high ruggedness (RBSOA, SCSOA etc)
Applicatons:
- Uniterruptible power supply
- Power coditionner
- Power Factor correction circuit
Additional Information:
- Item Code: FGW75N60HD
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9N90 MOSFET
Product Price: Rs 32 / PieceGet Best Price
Product Brochure
Product Details:
| Mounting Type | DIP |
| Voltage | 6,6 V - 14,8 V |
| Packaging Type | Box |
| Number Of Pins | 3 |
| Phase | Single Phase, Three Phase |
| Material | Metal and Plastic |
| Dimensions | 35 x 12 x 10,5 mm |
| Maximum Current | 140A |
MOSFET offers contactless switching of any circuit. Active brake function uses residual motor energy for its imidiate stop. The higher the torque of the motor, the better braking effect.
Advantages of using our MOSFET with active brake:
- The piston is stopped in its default position when on semi, which leaves the spring loose.
- Lower wear of not only piston and sping, but many other parts as well.
- Contactless switching.
- No more damage to the trigger contacts by high current - only signal current going through.
- Increases rate of fire as well as battery life.
- Solves the problem with double shot on semi.
- Works with all commonly used batteries (Ni-Mh/Ni-Cd/Li-Pol/Li-Ion/Li-Fe) with voltage 6,6V-14,8V.
- Designed primarily for all AEGs - airsoft electric guns.
MOSFET with active brake Classic description:
- Maximum current up to 140A - recommended use in correctly working replica is with spring up to M160 and rate of fire up to 28bbs/s.
- Power wires can be used up to 1,5mm2 (AWG16), signal up to 0,25mm2 (AWG24).
- Connected by two wires to each element - battery, motor, trigger contacts (see scheme).
- Built-in voltage stabilisation keeps MOSFET fully used at all times.
Alternatives:
- For higher load choose MOSFET with active brake Ultra.
- If you are not familiar with soldering, choose alternative with complete wiring.
Package contents:
- MOSFET with active brake Classic
- heat-shrink tubing for MOSFET
- user manual with installation instructions
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OSG65R069HZF TO-247 Diode
Product Price: Rs 275 / PieceGet Best Price
Minimum Order Quantity: 50 Piece
Product Brochure
Product Details:
| Brand | GreenMOS |
| Storage Temperature | -55 to 150 Degree C |
| Drain Source Voltage | 650 V |
| Power Dissipation | 390 W at Tc=25 Deg C |
| Gate Source Voltage | +/-30V |
| Model No | OSG65R069HZF TO-247 |
- Ultra-fast and robust body diode
- Low Ros(on) & FOM
- Excellent low switching loss
- Excellent stability and uniformity
- Easyto drive
Applications:
- PC Power
- Server Power Supply
- Telecom
- Solar Inverter
- Super Charger for Automobiles (E- Rickshaw battery charger)
- TO-247 Package
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SPW20N60C3 Power MOSFET
Price on Request
Product Brochure
Product Details:
| Minimum Order Quantity | 50 Piece |
| Brand | Infineon |
| Model Number | SPW20N60C3 |
| Operating and Storage Temperature | -55+150 deg C |
| Inverse Diode Forward Voltage | 1.2 V |
| Peak Reverse Recovery Current | 48 A |
| Gate Plateau Voltage | 8 V |
| Thermal Resistance | 0.6 kW |
| Power Dissipation | 208 W |
| Soldering Temperature | 1.6 mm (0.063 in.) from case for 10s |
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved noise immunity.
Additional Information:
- Item Code: VP-IGBTM-0514
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STE53NC50 Power MOSFET
Price on Request
Product Brochure
Product Details:
| Minimum Order Quantity | 50 Piece |
| Model Number | STE53NC50 |
| Storage Temperature | - 65 to 150 deg C |
| Insulation Winthstand Voltage | 2500 V (AC-RMS) |
| Drain Current | 212 A (pulsed) |
| Gate Source Voltage | +30 V |
| Drain Source Voltage | 500 V |
| Max Operating Junction Temperature | 150 deg C |
| Derating Factor | 3.68 W/C |
Applications:
- High Current, High Speed Switching
- Swith Mode Power Supplies (Smps)
- Dc-Ac Converters For Welding Equipment And Uninterruptible Power Supplies And Motor Driver.
Additional Information:
- Item Code: VP-IGBTM-0511
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RFP50N06 Power MOSFET
Price on Request
Product Brochure
Product Details:
| Minimum Order Quantity | 50 Piece |
| Brand | Fairchild |
| Model Number | RFP50N06 |
| Voltage | 60 V |
| Operating Temprature | 175 Degree C |
| Drain to Source Voltage | 60 V |
| Continuous Drain Current | 50 A |
Features:
- rDS(ON) = 0.022W
- Temperature Compensating PSPICE® Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
Additional Information:
- Item Code: VP-IGBTM-0496
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2SA1943 Toshiba Transistor
Price on Request
Product Brochure
Product Details:
| Minimum Order Quantity | 50 Piece |
| Collector Base Voltage | 230 V |
| Collector Emitter Voltage | 230 V |
| Emitter Base Voltage | -5 V |
| Collector Current | -15 V |
| Collector Dissipation | 150 W |
| Current Gain | 55 - 160 |
| Transition Frequency | 30 Hz |
- High collector voltage VCEO = −230 V (min)
- Complementary to 2SC5200
- Recommended for 100-W high-fidelity audio frequency amplifier output stage.
Additional Information:
- Item Code: VP-IGBTM-0399
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MG100J1BS11
Price on Request
Product Brochure
Product Details:
| Minimum Order Quantity | 50 Piece |
| Brand | Toshiba |
| Model Number | MG100J1BS11 |
- Enhancement-mode
- The electrodes are isolated from case.
Additional Information:
- Item Code: VP-IGBTM-0449
- Pay Mode Terms: Other
- Port of Dispatch: courier
- Production Capacity: 1000
- Delivery Time: immidietly else 2-3 weeks
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IKW75N60T Diode
Product Price: Rs 275 / PiecesGet Best Price
Minimum Order Quantity: 25 Pieces
Product Brochure
Product Details:
| Brand | Infineon |
| Maximum Junction Temperature | 175 deg C |
| Model No | IKW75N60T |
| Storage Temperature | -55+150 deg C |
| Power Dissipation | 428 W |
| No of Pin | 3 Pin |
| Packaging Type | Box |
| Current Rating | 100 A |
| Power | 2 kW |
- Very low VCE(sat) 1.5V (typ.)
- Maximum Junction Temperature 175°C
- Short circuit withstand time 5ยฟยฟยฟs
- Positive temperature coefficient in VCE(sat)
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- very high switching speed
- Low EMI
- Very soft, fast recovery anti-parallel Emitter Controlled HE diode
- Qualified according to JEDEC1) for target applications
- Pb-free lead plating; RoHS compliant.
Applications:
- Frequency Converters
- Uninterrupted Power Supply
Additional Information:
- Item Code: IKW75N60T
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