View Mobile No.

Send Email

Mosfet Transistor

Offering you a complete choice of products which include osg65r099hf to-247 enhancement mode n-channel power mosfet, osg60r092hf enhancement mode n-channel power mosfet, fgw75n60hd discrete igbt, 9n90 mosfet, osg65r069hzf to-247 diode and spw20n60c3 power mosfet.
OSG65R099HF TO-247 Enhancement Mode N-Channel Power MOSFET

OSG65R099HF TO-247 Enhancement Mode N-Channel Power MOSFET

Product Price: Rs 250 / PieceGet Best Price

Minimum Order Quantity: 50 Piece

Product Brochure

Product Details:
BrandGreenMOS
Usage/ApplicationE- Rickshaw Battery Charger
Voltage650 V
Number Of Pins3 pins
Current40 Ampere
Model NoOSG65R099HF
Drain Source Voltage650 V
Gate Source Voltage+/-30 V
Operation and storage temperature-55 to 150 deg C
OSG65R099HF TO-247 Enhancement Mode N-Channel Power MOSFET use advanced Green MOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for telecom and super charger applications.

Features:
  • Low RDS(on) & FOM
  • Excellent low switching loss
  • Excellent stability and uniformity
  • Easy to drive

Applications:
  • PC power
  • Server power supply
  • Telecom
  • Solar invertor
  • Super charger for automobiles


Additional Information:

  • Item Code: OSG65R099HF
Get Best QuoteRequest Callback
OSG60R092HF Enhancement Mode N-Channel Power MOSFET

OSG60R092HF Enhancement Mode N-Channel Power MOSFET

Product Price: Rs 250 / PieceGet Best Price

Minimum Order Quantity: 50 Piece

Product Brochure

Product Details:
BrandGreenMOS
Usage/ApplicationE- Rickshaw Battery Charger
Voltage600 V
Number Of Pins3 Pin
Current40 Ampere
Drain Source Voltage600 V
Model NoOSG60R092HF
Gate Source Voltage+/-30 V
Operation and Storage Temperature-55 to 150 deg C
Features:
  • Ultra-fast and robust body diode
  • Low Ros(on) & FOM
  • Excellent low switching loss
  • Excellent stability and uniformity
  • Easyto drive


Get Best QuoteRequest Callback
FGW75N60HD Discrete IGBT

FGW75N60HD Discrete IGBT

Product Price: Rs 225 / PieceGet Best Price

Minimum Order Quantity: 25 Piece

Product Brochure

Product Details:
Model NumberFGW75N60HD
BrandFuji
Voltage240 V
MaterialPlastic
Usage/ApplicationOnline UPS,Welding Machine
Operating Junction Temperature-40-+175 deg C
Storage Temperature-55-+175 deg C
Frequency50 Hz
Featrues:
  • Low Power loss
  • Low Switching surge and noise
  • High reliability, high ruggedness (RBSOA, SCSOA etc)

Applicatons:
  • Uniterruptible power supply
  • Power coditionner
  • Power Factor correction circuit


Additional Information:

  • Item Code: FGW75N60HD
Get Best QuoteRequest Callback
9N90 MOSFET

9N90 MOSFET

Product Price: Rs 32 / PieceGet Best Price

Product Brochure

Product Details:
Mounting TypeDIP
Packaging TypeBox
Voltage6,6 V - 14,8 V
Number Of Pins3
PhaseSingle Phase, Three Phase
MaterialMetal and Plastic
Dimensions35 x 12 x 10,5 mm
Maximum Current140A

MOSFET offers contactless switching of any circuit. Active brake function uses residual motor energy for its imidiate stop. The higher the torque of the motor, the better braking effect.

Advantages of using our MOSFET with active brake:

  • The piston is stopped in its default position when on semi, which leaves the spring loose.
  • Lower wear of not only piston and sping, but many other parts as well.
  • Contactless switching. 
  • No more damage to the trigger contacts by high current - only signal current going through.
  • Increases rate of fire as well as battery life.
  • Solves the problem with double shot on semi.
  • Works with all commonly used batteries (Ni-Mh/Ni-Cd/Li-Pol/Li-Ion/Li-Fe) with voltage 6,6V-14,8V.
  • Designed primarily for all AEGs - airsoft electric guns.


MOSFET with active brake Classic description:

  • Maximum current up to 140A - recommended use in correctly working replica is with spring up to M160 and rate of fire up to 28bbs/s.
  • Power wires can be used up to 1,5mm2 (AWG16), signal up to 0,25mm2 (AWG24).
  • Connected by two wires to each element - battery, motor, trigger contacts (see scheme).
  • Built-in voltage stabilisation keeps MOSFET fully used at all times.


Alternatives:

  • For higher load choose MOSFET with active brake Ultra.
  • If you are not familiar with soldering, choose alternative with complete wiring.


Package contents:
 

  • MOSFET with active brake Classic
  • heat-shrink tubing for MOSFET
  • user manual with installation instructions
Get Best QuoteRequest Callback
OSG65R069HZF TO-247 Diode

OSG65R069HZF TO-247 Diode

Product Price: Rs 275 / PieceGet Best Price

Minimum Order Quantity: 50 Piece

Product Brochure

Product Details:
BrandGreenMOS
Storage Temperature-55 to 150 Degree C
Drain Source Voltage650 V
Power Dissipation390 W at Tc=25 Deg C
Gate Source Voltage+/-30V
Model NoOSG65R069HZF TO-247
Features:
  • Ultra-fast and robust body diode
  • Low Ros(on) & FOM
  • Excellent low switching loss
  • Excellent stability and uniformity
  • Easyto drive

Applications:
  • PC Power
  • Server Power Supply
  • Telecom
  • Solar Inverter
  • Super Charger for Automobiles (E- Rickshaw battery charger)
  • TO-247 Package
Get Best QuoteRequest Callback
SPW20N60C3 Power MOSFET

SPW20N60C3 Power MOSFET

Price on Request

Product Brochure

Product Details:
Minimum Order Quantity50 Piece
BrandInfineon
Model NumberSPW20N60C3
Operating and Storage Temperature-55+150 deg C
Inverse Diode Forward Voltage1.2 V
Peak Reverse Recovery Current48 A
Gate Plateau Voltage8 V
Thermal Resistance0.6 kW
Power Dissipation208 W
Soldering Temperature1.6 mm (0.063 in.) from case for 10s
Features:
  • New revolutionary high voltage technology
  • Ultra low gate charge
  • Periodic avalanche rated
  • Extreme dv/dt rated
  • Ultra low effective capacitances
  • Improved noise immunity.


Additional Information:

  • Item Code: VP-IGBTM-0514
Get Best QuoteRequest Callback
STE53NC50 Power MOSFET

STE53NC50 Power MOSFET

Price on Request

Product Brochure

Product Details:
Minimum Order Quantity50 Piece
Model NumberSTE53NC50
Storage Temperature- 65 to 150 deg C
Insulation Winthstand Voltage2500 V (AC-RMS)
Drain Current212 A (pulsed)
Gate Source Voltage+30 V
Drain Source Voltage500 V
Max Operating Junction Temperature150 deg C
Derating Factor3.68 W/C
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

Applications:
  • High Current, High Speed Switching
  • Swith Mode Power Supplies (Smps)
  • Dc-Ac Converters For Welding Equipment And Uninterruptible Power Supplies And Motor Driver.


Additional Information:

  • Item Code: VP-IGBTM-0511
Get Best QuoteRequest Callback
RFP50N06 Power MOSFET

RFP50N06 Power MOSFET

Price on Request

Product Brochure

Product Details:
Minimum Order Quantity50 Piece
BrandFairchild
Model NumberRFP50N06
Voltage60 V
Operating Temprature175 Degree C
Drain to Source Voltage60 V
Continuous Drain Current50 A
These N-Channel power MOSFETs are manufactured using the MegaFET process. This, which use feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, Motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits

Features:
  • rDS(ON) = 0.022W
  • Temperature Compensating PSPICE® Model
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve


Additional Information:

  • Item Code: VP-IGBTM-0496
Get Best QuoteRequest Callback
2SA1943 Toshiba Transistor

2SA1943 Toshiba Transistor

Price on Request

Product Brochure

Product Details:
Minimum Order Quantity50 Piece
Collector Base Voltage230 V
Collector Emitter Voltage230 V
Emitter Base Voltage-5 V
Collector Current-15 V
Collector Dissipation150 W
Current Gain55 - 160
Transition Frequency30 Hz
Power Amplifier Applications:
  • High collector voltage VCEO = −230 V (min)
  • Complementary to 2SC5200
  • Recommended for 100-W high-fidelity audio frequency amplifier output stage.


Additional Information:

  • Item Code: VP-IGBTM-0399
Get Best QuoteRequest Callback
MG100J1BS11

MG100J1BS11

Price on Request

Product Brochure

Product Details:
Minimum Order Quantity50 Piece
BrandToshiba
Model NumberMG100J1BS11
High Power Switching Applications Motor Control Applications

- Enhancement-mode

- The electrodes are isolated from case.



Additional Information:

  • Item Code: VP-IGBTM-0449
  • Pay Mode Terms: Other
  • Port of Dispatch: courier
  • Production Capacity: 1000
  • Delivery Time: immidietly else 2-3 weeks
Get Best QuoteRequest Callback
FGL60N100BNTD Trench IGBT

FGL60N100BNTD Trench IGBT

Product Price: Rs 185 / UnitGet Best Price

Minimum Order Quantity: 25 Unit

Product Brochure

Product Details:
Model NumberFGL60N100BNTD
Voltage1000 V
Current Rating40 A
UsageSwitching
Power SourceElectric
Collector to Emitter Voltage1000 V
Operating Junction Temperature-55 - +150 deg C
Storage Temperature-55 - +150 deg C
Using Fairchild's proprietary trench design and advanced NPT technoloty, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.

Features:
  • High Speed switching
  • Low saturation Voltage
  • Hight INput impedance
  • Built-in Fast recovery diode

Applications:
  • UPS
  • Welder


Additional Information:

  • Item Code: FGL60N100BNTD
Get Best QuoteRequest Callback
IKW75N60T Diode

IKW75N60T Diode

Product Price: Rs 275 / PiecesGet Best Price

Minimum Order Quantity: 25 Pieces

Product Brochure

Product Details:
BrandInfineon
Maximum Junction Temperature175 deg C
Model NoIKW75N60T
Storage Temperature-55+150 deg C
Power Dissipation428 W
No of Pin3 Pin
Packaging TypeBox
Current Rating100 A
Power2 kW
Features:
  • Very low VCE(sat) 1.5V (typ.)
  • Maximum Junction Temperature 175°C
  • Short circuit withstand time 5¿¿¿s
  • Positive temperature coefficient in VCE(sat)
  • very tight parameter distribution
  • high ruggedness, temperature stable behaviour
  • very high switching speed
  • Low EMI
  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode
  • Qualified according to JEDEC1) for target applications
  • Pb-free lead plating; RoHS compliant.

Applications:
  • Frequency Converters 
  • Uninterrupted Power Supply


Additional Information:

  • Item Code: IKW75N60T
Get Best QuoteRequest Callback

EXPLORE MORE CATEGORIES

Looking For "Mosfet Transistor"?
Thank you Your Enquiry has been sent successfully.
© V. P. Electronics. All Rights Reserved (Terms of Use)Developed and managed by IndiaMART InterMESH Ltd.